component supplier Denso will collaborate with United Semiconductor Japan Co
(USJC), a subsidiary of global semiconductor foundry United Microelectronics
Corporation, for the production of power semiconductors.
It would take
place at USJC’s 300mm fab in order to serve the growing demand in the automotive
market. An insulated-gate bipolar transistor (IGBT) line will be installed at
USJC’s wafer fab, which will be the first in Japan to produce IGBTs on 300mm
wafers, the Japanese mobility supplier said in a release. Denso will contribute
its system-oriented IGBT device and process technologies while USJC will
provide its 300mm wafer manufacturing capabilities to bring 300mm IGBT process
into mass production, scheduled to start in the first half of 2023.
collaboration is supported by the renovation and decarbonization programme for
indispensable semiconductors of Japan’s Ministry of Economy, Trade and
Industry. As the development and adoption of electric cars accelerate amid a
global effort to reduce carbon emissions, the demand for semiconductors required
in the electrification of vehicles is also rapidly increasing. IGBTs are core
devices in power cards, serving as efficient power switches in inverters to
convert DC and AC currents in order to drive and control electric vehicle
motors. Koji Arima, President of DENSO, said that, DENSO is very glad to be among the first
companies in Japan to start mass production of IGBTs on 300 mm wafers.
He added that,
semiconductors are becoming increasingly important in the automotive industry
as mobility technologies evolve, including automated driving and
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